F1.1-PIM
Rated voltage: 650V
Rated current: 15A
Circuit structure: PJ=3 Phase Rectifier + Brake + 3 Phase Open Emitter Output
Chip series: X=Trench FS IGBT, Low Loss
Product number:GD15PJX65F1S

C1.0-Half Bridge
Rated voltage: 1200V
Rated current: 150A
Circuit structure: HF=Half Bridge
Chip series: Y=Advanced Trench FS IGBT, Low Loss
Product number:GD150HFY120C1S

L2.2-PIM
Rated voltage: 650V
Rated current: 10A
Circuit structure: PJ=3 Phase Rectifier + Brake + 3 Phase Open Emitter Output
Chip series: X=Trench FS IGBT, Low Loss
Product number:GD10PJX65L2S

1200V/10A PIM in one-package
Features
Low VCE(sat) Trench IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175oC
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated heatsink using DBC technology

C1.0-Half Bridge
Rated voltage: 650V
Rated current: 150A
Circuit structure: HF=Half Bridge
Chip series: X=Trench FS IGBT, Low Loss
Product number: GD150HFX65C1S

C1.0-Half Bridge
Rated voltage: 1200V
Rated current: 100A
Circuit structure: HF=Half Bridge
Chip series: Y=Advanced Trench FS IGBT, Low Loss
Product number:GD100HFY120C1S
http://www.powersemi.cc/hchi_admin/upfile/GD100HFY120C1S.pdf

C6.3.PIM
Rated voltage: 1200V
Rated current: 100A
Circuit structure: PIM
Chip Series: Y Trench IGBT Low Power
Product number: GD100PIY120C6SN

Hard switching IGBT, TO-247, 1200V, 25A